The 5th ‘Silicon Power Salon’ and Blue Silicon Technology’s New Product Launch Successfully Held

The 5th ‘Silicon Power Salon’ and Blue Silicon Technology’s New Product Launch Successfully Held


On July 19th, Silicon Power Technology held the fifth ‘Silicon Power Salon’. In this event, Professor Zhang Bo, the leader of the power semiconductor industry and director of UESTC PITEL, gave a speech. At the same time, Blue Silicon Technology announced the launch of BlueMOS, a new generation of advanced power products, which makes Silicon Power Technology closer to the goal of “Creating China's Best Quality Power Semiconductor Incubator”. David French, Chairman of Chengdu Silicon Power Technology, and Winter Chan, CEO of Blue Silicon Technology, unveiled the new product. Jesse Parker, General Manager of Silicon Power Technology, delivered the opening speech. Jiang Jun from Chengdu ICC, McCoy Holdings Pte, Progate Technology, CRHJ, China Lestina, China Max, Everbright Capital and other partners with Silicon Power and Blue Silicon, and experts, scholars and seniors from the semiconductor industry attended the event.




In his speech, Jesse Parker first thanked the partners who have given great support and help to the company and its incubating companies for more than half a year. Jesse Parker pointed out that at today's Silicon Power Salon, Blue Silicon Technology, the first company settled in Silicon Power's incubator, will show their newly developed power products. This is the result of close cooperation between the incubator and Blue Silicon Technology. By the advanced business model of In-kind Partners, the incubator brings together the resources necessary for many well-known investment companies, foundries, EDA companies, fabs, research institutes and other start-ups to provide these resources free of charge for companies that have settled in, so as to greatly reduce R&D costs and shorten the research and development time, which enables the company to develop products smoothly and quickly. There are six companies that the incubator is currently incubating. These companies are also enjoying the various services provided free of charge, and are accelerating their growth. He believes that in the near future, there will be more and more start-ups harvesting their fruits like Blue Silicon Technology.



David French, chairman of Chengdu Silicon Power Technology, pointed out in his speech that the purpose of the Incubator was to promote the development of China's power semiconductor industry by integrating global semiconductor resources such as China and the United States, making China an important country for global power semiconductor R&D. Blue Silicon Technology is the first company to enter the incubator. With the full support of the incubator, Blue Silicon Technology has developed a new product after as short as half of one year. It proves not only the strong competitiveness of the company introduced by Silicon Power Technology, but also the advanced incubation method. At present, the incubator is operating as scheduled, and all the progress is very smooth. In the future, the company will incubate more outstanding companies.





Winter Chan, CEO of Blue Silicon Technology, Harvey An, Deputy General Manager of Products, and Harris Ho, Vice President of Marketing, introduced the team building, value concept, technical strength, development strategy and performance, characteristics, advantages and applications of new products, as well as marketing strategies. Founded in 2018, Blue Silicon Technology is a semiconductor design company established in the company's incubator. Blue Silicon's management and R&D teams are from China, the United States, Singapore and other regions. The major members have worked in TI, Fairchild, Cree, Arrow, Philips, CRRC and other domestic and international well-known companies. The team boasts strong research and development capability, focusing on high-tech companies in the field of power semiconductors, and products involving silicon-based and SiC, GaN and other wide bandgap materials MOSFET and IGBT devices, modules, power management Chip and "one-stop" power conversion and management solutions. The new generation of BlueMOS devices has fully utilized the experience and new development ideas long accumulated by Blue Silicon Technology developers, and has made technical improvements in wafer processing and device packaging, thereby reducing power consumption and material costs and reducing The size, while the power efficiency and power density are greatly improved, and the design of the product application scheme is simple. Compared with similar products on the market, these advantages are distinguished. The current types of products in mass production are mainly 30V~150V voltage series, and each type of product has various packaging to meet the needs of different applications. The products are mainly applied in motor drive, power management, lithium battery protection and other functional parts, focusing on communications industry, Internet of Things, automotive, industrial equipment, home appliances and other terminal industries. Blue Silicon's company vision is to become the leading power semiconductor company in China within three years, with the ultimate goal of becoming one the world's top ten power semiconductor companies.



After the new product launch, the "Silicon Power Salon" lecture was held. Zhang Bo, director of UESTC PITEL, and Zeng Zefu, chief expert of Chengdu Star Source, and Jesse Parker, general manager of Chengdu Silicon Power Technology, gave speeches respectively.

Professor Zhang Bo’s speech is “Power Super-Junction Device”. Zhang Bo pointed out that in the development of power devices, breakdown voltage and on-resistance are contradictory. In the late 1980s, high-voltage power MOS tubes reached a bottleneck of growth. The on-resistance was limited by the breakdown voltage, and could not be reduced any lower. The performance improvement of high-voltage silicon devices encountered a "ceiling". In order to break through this limit, many new structural devices continued to emerge. In the late 1980s and early 1990s, a new concept broke this "ceiling". After the concept was evolved and improved, the "super-junction theory" was formed. Super-Junction metal oxide field effect tubes use Charge Balance to make Rsp and BV close to a linear relationship instead of a 2.5 exponential relationship. It breaks the theoretical pole of traditional power MOSFET devices and is internationally known as "a milestone in the field of power MOSFET devices." Using the super-junction theory, both low on-state power consumption and high switching speed can be obtained. The typical product of the early application of super-junction theory was the "COOLMOSTM" device introduced by Infineon of Siemens in Germany in 1998. The revolutionary breakthrough of the "COOLMOSTM" product introduced at that time was: in the scope of its work, compared with traditional technology, the on-resistance of the same chip area is reduced by 80%-90%, breaking the silicon limit and having a high switching speed. Super-junction technology is not only a process, but also a structure. In the 1980s and 1990s, Europe, America, Japan and other countries proposed three super-junction technologies through different methods and applied for patents before application.

Super junction structures have become an important trend in the development of semiconductor power devices. When using high-voltage and high-power MOSFET, the driving power of the front stage can be reduced, thus the power consumption of the device can be reduced. The power conversion efficiency is excellent. The efficiency of the whole machine is improved, and the energy consumption is reduced to become environment-friendly. Compared with traditional planar high voltage power MOSFET devices, high voltage super junction power MOSFETs are characterized by small size, low on-resistance, high load drive capability, low temperature rise in power devices, high reliability levels, and long operating life. At the same withstand voltage, the allowable operating frequency is higher, and the operating current required for the gate is small. Under the condition of the same terminal power requirement, a high-voltage super junction power MOSFET device with a smaller package can be used. The power converters produced by high-voltage super-junction power MOSFET devices have greatly improved energy efficiency and are an advanced structural device that completely replaces traditional planar process high-voltage power MOSFET devices.

In response to questions from the scene, Zhang Bo said that wide-bandgap semiconductors such as SiC and GaN will be an important trend for semiconductor development. In consideration of performance, cost, process and other factors, for a long period of time, BB, GaN and other wide band gaps semiconductors have not completely replaced traditional silicon-based semiconductors. As a result, traditional silicon-based semiconductor products and emerging wide-bandgap semiconductors such as SiC and GaN should complement each other and develop a relationship.



Jesse Parker, the general manager of Chengdu Silicon Power Technology introduced the semiconductor entrepreneurship course he planned by himself. Mr. Jesse Parker is an American. He has been in China for 25 years. He has served as an executive in well-known multinational companies such as IBM, Softbank, and Shanghai Advanced Semiconductor. He has also personally founded Gaozhan Investment, Gaozhan Consulting, Dragonvest Investment and other companies. He has a wealth of business management experience and the most practicable entrepreneurial skills theory. Starting from this "Silicon Power Salon", Mr. Jesse Parker will introduce the entrepreneurial guidance series, and will share the experience and knowledge accumulated over the years to the audience of the salon. Jesse Parker said that the Silicon Power Salon lecture in the second half of the year will be divided into two parts: entrepreneurial knowledge and skills and semiconductor design and manufacturing technology. The topics identified in the entrepreneurial knowledge and skills section include investment knowledge and experience from the initial stage of semiconductor investment, important legal matters during the startup phase and semiconductor IP protection and patent review, semiconductor investment opportunities in VC investors’ vision, the role of PE investment in the initial development of semiconductor companies, and ways to successfully attract national big funds and bank investment. The topics identified in the Semiconductor Design and Manufacturing Technology are Tape-out & MPW processes, selection and use of EDA tools, chip packaging and testing technologies, discrete device and IC reliability tests, wide bandgap semiconductor device performance, and manufacturing process and applications.



Zeng Zefu, chief expert of Chengdu Star Source gave a speech on "NB-IOT RF Front-End Design and Testing". Zeng Zefu pointed out that the Internet of Things has penetrated into all walks of life. The era of Internet of Everything is entering our lives at an extremely fast speed. NB-IOT means narrow-band Internet of Things. It has become the most important technology in the Internet of Things wireless technology depending on its advantages of wide coverage, low power consumption, large connection and low cost. The number of NB-IOT base stations has reached 1.1 million by the end of 2018, and the number of NB-IOT base stations is expected to reach 3 million by 2025.


Finally, congratulations to those won the prize in the lucky draw today.